Lead zirconate titanate films prepared by liquid source misted chemical deposition KOVAL, V., BHARADWAJA, S. S. N., TROLIER-MCKINSTRY, S. vol. 48 (2010), no. 6, pp. 361 - 365 DOI: 10.4149/km_2010_6_361
Abstract In this study, lead zirconate titanate (PZT) thin films were prepared by liquid source misted chemical deposition (LSMCD) method and their structural and electrical properties were investigated. The LSMCD technique utilizes micron-sized droplets of an organic based liquid precursor to produce high quality thin films with good conformality and uniformity. PZT films, annealed at temperature of 750 °C for 1 min in oxygen ambient, were polycrystalline and exhibited good phase purity with a (111)-preferred crystallographic orientation. The capacitance voltage (C-V) and polarization electric field (P-E) hysteresis measurements in wide frequency range showed that mist deposited PZT films exhibited the electrical properties comparable with those of other processing methods. Key words ferroelectric, thin film, PZT, misted deposition, dielectric properties Full text (166 KB)
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