The effect of growth conditions on structure of Al-Si eutectic modified by stroncium (in Czech) VELISEK, R. vol. 33 (1995), no. 5, pp. 317 - 329
Abstract The effect of growth rate on structure of Al-Si eutectic modified by stroncium was studied. It was investigated, that the silicon in structure crystallized below 20 µm/s has a fibrous form and these fibers can be branched thanks TPRE mechanism. In the structure crystallized higher growth rate the silicon has globular shape and TPRE mechanism is retarded by concentrating Sr atoms at the twin planes. The studies of crystal shape serve for better understanding of crystallization processes. The relations between interparticle spacing and growth rate was determined as λ = 11.04 R-0.31 Key words effect of growth rate, Al-Si eutectic modified by stroncium, interparticle spacing, TPRE mechanism Full text not available
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