Abstract
Tin antimony metallic films were deposited by the sputtering technique. Sulfurization of these metallic films was carried out in thermal vacuum coating unit. Furthermore, the samples were annealed in argon atmosphere at different temperatures ranges from 425 to 525 °C for one hour inside quartz ampoules. The effects of the thermal annealing on the structural, optical and electrical properties on the sulfosalt Sn-Sb-S films have been investigated. The elemental composition was carried with Energy Dispersive X-ray Spectroscopy. Molybdenum contacts were deposited for electrical measurement through sputtered coater by using mask arrangement. The photoconductivity measurements suggest that the obtained films show semiconducting behavior with band gap of 1.3 eV.

Key words
sputtering, photoconductivity, band gap, sulfurization, annealing

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