Abstract
CuInSe₂ films were prepared by spin-coating and chemical co-reduction method using Cu(NO₃)₂⋅ 3H₂O, In(NO₃)₃⋅ 4.5H₂O, and SeO₂ powders as raw materials, and the reaction mechanism was analyzed. The phases of product samples were analyzed by X-ray diffraction (XRD) on the Bruker D8 Advance XRD system with Ni-filtered Cu-Kα (λ = 1.5059 Å). The surface resistance of the product film was measured using a four-probe resistance instrument. The surface morphology of the product films was observed using scanning electron microscope (SEM). The experimental results show that the film samples can be prepared at 140–220 °C with major phase CuInSe₂ which diffraction peaks at 2θ angles with 26.7°, 44.3°, and 52.5° correspond to the (112), (204), and (312) crystal planes, respectively. With the increase of the reaction temperature, the diffraction peak intensity of CuInSe₂ increases and the crystallization becomes better. The CuInSe₂ film samples obtained at 200 and 220 °C for 20 h consist of round crystals with diameters of about 0.3–0.5 μm and a small number of large crystals with diameters of about 1–1.5 μm. The reaction time prolongation facilitates the crystallization of the thin film samples. The average resistivity of CuInSe₂ film synthesized at 220 °C for 40 h was 4.18 E^–3 Ω cm.

Key words
photoelectric film, co-reduction, spin-coating, resistivity, CuInSe₂

Full text (685 KB)