Abstract
The effect of Si additive on the electrical resistivity measurements of Cu-Zn ferrites was investigated and then used to calculate the activation energy and drift mobility of all the samples. The series was prepared using the conventional ceramic double sintering process for x = 0.66, 0.77, 0.88, 0.99, and X-ray diffraction (XRD) measurements were taken to confirm the formation of ferrite structure. The improved values are attributed to the presence of Si, which can effectively perk up the resistivity. The room temperature dc resistivity decreases with increasing Cu content, which may be due to the CuP⁺²→CuP⁺¹ transition. The dc resistivity as a function of temperature range from 303 to 453 K was found to decrease with increasing temperature revealed semi conducting behavior. The results obtained explained that activation energy, E_p, decreases by increasing Cu content x, whereas mobility contradicts this result. It has also been pragmatic that the samples having higher resistivity have low mobility and mobility increases by increasing Cu content x.

Key words
ferroelectrics, Cu-Zn ferrite, silicon additive, semiconductors, electrical properties

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