|Characterization of CuInSe2 films prepared by spin-coating and chemical co-reduction with nitrates|
LI, J., CUI, P. B., LIU, K. G., XU, Y., ZHANG, L.
vol. 56 (2018), no. 3, pp. 171 - 175
CuInSe2 films were prepared by spin-coating and chemical co-reduction method using Cu(NO3)2⋅ 3H2O, In(NO3)3⋅ 4.5H2O, and SeO2 powders as raw materials, and the reaction mechanism was analyzed. The phases of product samples were analyzed by X-ray diffraction (XRD) on the Bruker D8 Advance XRD system with Ni-filtered Cu-Kα (λ = 1.5059 Å). The surface resistance of the product film was measured using a four-probe resistance instrument. The surface morphology of the product films was observed using scanning electron microscope (SEM). The experimental results show that the film samples can be prepared at 140–220 °C with major phase CuInSe2 which diffraction peaks at 2θ angles with 26.7°, 44.3°, and 52.5° correspond to the (112), (204), and (312) crystal planes, respectively. With the increase of the reaction temperature, the diffraction peak intensity of CuInSe2 increases and the crystallization becomes better. The CuInSe2 film samples obtained at 200 and 220 °C for 20 h consist of round crystals with diameters of about 0.3–0.5 μm and a small number of large crystals with diameters of about 1–1.5 μm. The reaction time prolongation facilitates the crystallization of the thin film samples. The average resistivity of CuInSe2 film synthesized at 220 °C for 40 h was 4.18 E–3 Ω cm.
photoelectric film, co-reduction, spin-coating, resistivity, CuInSe2
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